elektronische bauelemente spr50n03 51a , 30v , r ds(on) 9 m ? n-channel enhancement mode power mosfet 20-may-2014 rev.a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description the spr50n03 provide the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. the pr-8pp pa ckage is universally preferred for all commercial-industr ial surface mount applications and suited for low voltage appli cations such as dc/dc converters. features lower gate charge simple drive requirement fast switching characteristic marking package information package mpq leader size pr-8pp 3k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t c =25c 51 a t c =100c 36 a t a =25c 12 a continuous drain current 1 @v gs =10v t a =70c i d 9.6 a pulsed drain current 2 i dm 130 a single pulse avalanche energy 3 eas 130 mj avalanche current i as 34 a power dissipation 4 t c =25c p d 46 w operating junction & storage temperature t j , t stg -55~150 c thermal resistance rating thermal resistance junction-ambient 1 (max). r ja 62 c / w thermal resistance junction-case 1 (max). r jc 2.7 c / w 50n03 = date code pr-8pp g s s s d d d d millimeter millimeter ref. min. max. ref. min. max. a 4.9 5.1 g 0.8 1.0 b 5.7 5.9 h 0.254 ref. c 5.95 6.2 i 4.0 ref. d 1.27 bsc. j 3.4 ref. e 0.35 0.49 k 0.6 ref. f 0.1 0.2 l 1.4 ref.
elektronische bauelemente spr50n03 51a , 30v , r ds(on) 9 m ? n-channel enhancement mode power mosfet 20-may-2014 rev.a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 30 - - v v gs =0, i d = 250ua gate-threshold voltage v gs(th) 1 - 2.5 v v ds =v gs , i d =250ua forward tranconductance g fs - 42 - s v ds =5v, i d =30a gate-source leakage current i gss - - 100 na v gs = 20v - - 1 v ds =24v, v gs =0, t j =25c drain-source leakage current i dss - - 5 ua v ds =24v, v gs =0, t j =55c - - 9 v gs =10v, i d =30a static drain-source on-resistance 2 r ds(on) - - 13.5 m v gs =4.5v, i d =15a gate resistance r g - 2.1 3.5 f =1.0mhz total gate charge q g - 10.6 - gate-source charge q gs - 4.2 - gate-drain (miller) change q gd - 4 - nc i d =15a v ds =15v v gs =4.5v turn-on delay time 2 t d(on) - 6.4 - rise time t r - 70.6 - turn-off delay time t d(off) - 22.4 - fall time t f - 8 - ns v dd =15v i d =15a v gs =10v r g =3.3 input capacitance c iss - 1127 - output capacitance c oss - 194 - reverse transfer capacitance c rss - 77 - pf v gs =0 v ds =15v f =1.0mhz guaranteed avalanche characteristics single pulse avalanche energy 5 eas 45 - - mj v dd =25v, l=0.1mh, i as =20a source-drain diode diode forward voltage 2 v sd - - 1 v i s =1a, v gs =0v continuous source current 1,6 i s - - 51 a pulsed source current 2,6 i sm - - 130 a v g =v d =0, force current reverse recovery time t rr - 12 - ns reverse recovery charge q rr - 3.7 - nc i f =30a, dl/dt=100a/ s, t j =25c note: 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2oz copper , Q 10sec , 125 /w at steady state 2. the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3. the eas data shows max. rating . the test condit ion is v dd =25v,v gs =10v,l=0.1mh,i as =34a 4. the power dissipation is limited by 150c juncti on temperature 5. the min. value is 100% eas tested guarantee. 6. the data is theoretically the same as id and idm , in real applications , should be limited by tota l power dissipation.
elektronische bauelemente spr50n03 51a , 30v , r ds(on) 9 m ? n-channel enhancement mode power mosfet 20-may-2014 rev.a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente spr50n03 51a , 30v , r ds(on) 9 m ? n-channel enhancement mode power mosfet 20-may-2014 rev.a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
|
